[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

FJV3110RMTF Технические параметры

ON Semiconductor  FJV3110RMTF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 30mg
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage 300mV
Number of Elements 1 Element
hFEMin 100
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR
HTS Code 8541.21.00.95
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FJV3110
Qualification Status Not Qualified
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 10V
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Height 930μm
Length 2.92mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

FJV3110RMTF Документы

FJV3110RMTF brand manufacturers: ON Semiconductor, Anli stock, FJV3110RMTF reference price.ON Semiconductor. FJV3110RMTF parameters, FJV3110RMTF Datasheet PDF and pin diagram description download.You can use the FJV3110RMTF Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FJV3110RMTF pin diagram and circuit diagram and usage method of function,FJV3110RMTF electronics tutorials.You can download from the Anli.