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FOD617B Технические параметры

ON Semiconductor  FOD617B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4Pins
Supplier Device Package 4-DIP
Weight 243.012112mg
Collector-Emitter Saturation Voltage 400mV
Current Transfer Ratio-Min 63% @ 10mA
Number of Elements 1 Element
Operating Temperature -55°C~110°C
Packaging Tube
Published 2006
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 110°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Voltage - Isolation 5000Vrms
Output Voltage 70V
Output Type Transistor
Number of Channels 1Channel
Свойство продукта Значение свойства
Number of Circuits 1Circuit
Power Dissipation 200mW
Voltage - Forward (Vf) (Typ) 1.35V
Input Type DC
Forward Current 50mA
Max Output Voltage 70V
Output Current per Channel 50mA
Rise Time 18μs
Forward Voltage 1.65V
Fall Time (Typ) 18 μs
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 50mA
Rise / Fall Time (Typ) 4μs 3μs
Reverse Breakdown Voltage 6V
Max Input Current 50mA
Current - DC Forward (If) (Max) 50mA
Input Current 20mA
Current Transfer Ratio (Max) 125% @ 10mA
Vce Saturation (Max) 400mV
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FOD617B Документы

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