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FOD817BW Технические параметры

ON Semiconductor  FOD817BW technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.400, 10.16mm)
Number of Pins 4Pins
Collector-Emitter Saturation Voltage 200mV
Current Transfer Ratio-Min 130% @ 5mA
Number of Elements 1 Element
Operating Temperature -55°C~110°C
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Voltage - Isolation 5000Vrms
Свойство продукта Значение свойства
Output Voltage 70V
Output Type Transistor
Power Dissipation 200mW
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Forward Current 50mA
Output Current per Channel 50mA
Rise Time 18μs
Fall Time (Typ) 18 μs
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 50mA
Rise / Fall Time (Typ) 4μs 3μs
Reverse Breakdown Voltage 6V
Current Transfer Ratio (Max) 260% @ 5mA
RoHS Status RoHS Compliant
Lead Free Lead Free

FOD817BW Документы

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