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FPN660A_D27Z Технические параметры

ON Semiconductor  FPN660A_D27Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-226
Current-Collector (Ic) (Max) 3A
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number FPN660
Power - Max 1W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition 75MHz
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FPN660A_D27Z Документы

FPN660A_D27Z brand manufacturers: ON Semiconductor, Anli stock, FPN660A_D27Z reference price.ON Semiconductor. FPN660A_D27Z parameters, FPN660A_D27Z Datasheet PDF and pin diagram description download.You can use the FPN660A_D27Z Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find FPN660A_D27Z pin diagram and circuit diagram and usage method of function,FPN660A_D27Z electronics tutorials.You can download from the Anli.