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ON Semiconductor FQA8N90C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 8A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 240W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | QFET® | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | MATTE TIN |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.9 Ω @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2080pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V | |
| Drain to Source Voltage (Vdss) | 900V | |
| Vgs (Max) | ±30V | |
| Drain Current-Max (Abs) (ID) | 8A | |
| Pulsed Drain Current-Max (IDM) | 32A | |
| DS Breakdown Voltage-Min | 900V | |
| Avalanche Energy Rating (Eas) | 850 mJ |