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FQB12N60CTM Технические параметры

ON Semiconductor  FQB12N60CTM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package D2PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 3.13W Ta 225W Tc
Turn Off Delay Time 155 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Current Rating 12A
Element Configuration Single
Power Dissipation 225W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 85ns
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
Fall Time (Typ) 90 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 2.29nF
Drain to Source Resistance 650mOhm
Rds On Max 650 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

FQB12N60CTM Документы

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