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FQB34N20LTM Технические параметры

ON Semiconductor  FQB34N20LTM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2Pins
Weight 1.31247g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 31A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.13W Ta 180W Tc
Turn Off Delay Time 170 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series QFET®
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 75mOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC 200V
Terminal Form GULL WING
Свойство продукта Значение свойства
Current Rating 31A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.13W
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 15.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 72nC @ 5V
Rise Time 520ns
Vgs (Max) ±20V
Fall Time (Typ) 370 ns
Continuous Drain Current (ID) 31A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 640 mJ
Nominal Vgs 2 V
Feedback Cap-Max (Crss) 67 pF
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQB34N20LTM Документы

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