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FQD12N20TF Технические параметры
ON Semiconductor FQD12N20TF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Current - Continuous Drain (Id) @ 25℃ | 9A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.5W Ta 55W Tc | |
| Turn Off Delay Time | 30 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | QFET® | |
| Published | 2016 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | 200V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 9A | |
| Element Configuration | Single | |
| Power Dissipation | 2.5W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 280m Ω @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| Rise Time | 120ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 55 ns | |
| Continuous Drain Current (ID) | 9A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 200V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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