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FQD20N06TM Технические параметры

ON Semiconductor  FQD20N06TM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 16.8A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta 38W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Terminal Form GULL WING
Current Rating 16.8A
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Voltage 55V
Element Configuration Single
Current 18A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 63m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 45ns
Vgs (Max) ±25V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 16.8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 60V
Height 2.3mm
Length 6.6mm
Width 6.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQD20N06TM Документы

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