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FQD30N06TM Технические параметры

ON Semiconductor  FQD30N06TM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 260.37mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22.7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta 44W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 11.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 945pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±25V
Continuous Drain Current (ID) 22.7A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 90.8A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 280 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQD30N06TM Документы

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