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FQD3P50TM Технические параметры
ON Semiconductor FQD3P50TM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 2.1A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.5W Ta 50W Tc | |
| Turn Off Delay Time | 35 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | QFET® | |
| Published | 2000 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 4.9Ohm | |
| Terminal Finish | Tin (Sn) | |
| Voltage - Rated DC | -500V | |
| Terminal Form | GULL WING | |
| Current Rating | -2.1A | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Channels | 1Channel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Voltage | 400V | |
| Element Configuration | Single | |
| Current | 18A | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.5W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 12 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4.9 Ω @ 1.05A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| Rise Time | 56ns | |
| Drain to Source Voltage (Vdss) | 500V | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 45 ns | |
| Continuous Drain Current (ID) | -2.1A | |
| Threshold Voltage | -5V | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | -500V | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 2.517mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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