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FQD5N60CTM Технические параметры

ON Semiconductor  FQD5N60CTM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 260.37mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.8A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta 49W Tc
Turn Off Delay Time 38 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 2.5Ohm
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Terminal Form GULL WING
Current Rating 5A
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 42ns
Vgs (Max) ±30V
Fall Time (Typ) 46 ns
Continuous Drain Current (ID) 2.8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Height 2.39mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQD5N60CTM Документы

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