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FQN1N50CTA Технические параметры

ON Semiconductor  FQN1N50CTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3Pins
Weight 240mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 380mA Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 890mW Ta 2.08W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Series QFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 6Ohm
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Position BOTTOM
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 890mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Rise Time 10ns
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 380mA
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Feedback Cap-Max (Crss) 40 pF
Height 5.33mm
Length 5.2mm
Width 4.19mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQN1N50CTA Документы

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