Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
FQP10N20CTSTU Технические параметры
ON Semiconductor FQP10N20CTSTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Current - Continuous Drain (Id) @ 25℃ | 9.5A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 72W Tc | |
| Turn Off Delay Time | 70 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | QFET® | |
| Published | 2013 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Voltage - Rated DC | 200V | |
| Current Rating | 9.5A | |
| Element Configuration | Single | |
| Power Dissipation | 72W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 4.75A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V | |
| Vgs (Max) | ±30V | |
| Continuous Drain Current (ID) | 9.5A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 200V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
FQP10N20CTSTU Документы
- ReachStatementFairchild-Semiconductor-company-9.pdf
- DatasheetsTO220B03 Pkg Drawing
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ