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ON Semiconductor FQP16N15 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220-3 | |
| Current - Continuous Drain (Id) @ 25℃ | 16.4A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 108W Tc | |
| Turn Off Delay Time | 50 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | QFET® | |
| Published | 2000 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 150V | |
| Current Rating | 16.4A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 108W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.2A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Rise Time | 115ns | |
| Drain to Source Voltage (Vdss) | 150V | |
| Vgs (Max) | ±25V | |
| Fall Time (Typ) | 80 ns | |
| Continuous Drain Current (ID) | 16.4A | |
| Gate to Source Voltage (Vgs) | 25V | |
| Drain to Source Breakdown Voltage | 150V | |
| Input Capacitance | 910pF | |
| Drain to Source Resistance | 160mOhm | |
| Rds On Max | 160 mΩ | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |