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FQP16N15 Технические параметры

ON Semiconductor  FQP16N15 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Current - Continuous Drain (Id) @ 25℃ 16.4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 108W Tc
Turn Off Delay Time 50 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series QFET®
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 150V
Current Rating 16.4A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 108W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 115ns
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±25V
Fall Time (Typ) 80 ns
Continuous Drain Current (ID) 16.4A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 150V
Input Capacitance 910pF
Drain to Source Resistance 160mOhm
Rds On Max 160 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

FQP16N15 Документы

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