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FQPF12N60C Технические параметры

ON Semiconductor  FQPF12N60C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.27g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 51W Tc
Turn Off Delay Time 155 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 51W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 85ns
Vgs (Max) ±30V
Fall Time (Typ) 90 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.65Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 870 mJ
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

FQPF12N60C Документы

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