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FQPF19N10 Технические параметры

ON Semiconductor  FQPF19N10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.27g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13.6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 38W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series QFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Current Rating 19A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection ISOLATED
Turn On Delay Time 7.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 150ns
Vgs (Max) ±25V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 13.6A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 54.4A
Avalanche Energy Rating (Eas) 220 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQPF19N10 Документы

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