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FQPF19N20CYDTU Технические параметры
ON Semiconductor FQPF19N20CYDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack, Formed Leads | |
| Number of Pins | 3Pins | |
| Weight | 2.565g | |
| Current - Continuous Drain (Id) @ 25℃ | 19A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 43W Tc | |
| Turn Off Delay Time | 135 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | QFET® | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 43W | |
| Turn On Delay Time | 15 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 170m Ω @ 9.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V | |
| Rise Time | 150ns | |
| Drain to Source Voltage (Vdss) | 200V | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 115 ns | |
| Continuous Drain Current (ID) | 19A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
FQPF19N20CYDTU Документы
- ReachStatementFairchild-Semiconductor-company-9.pdf
- Datasheets
Индекс :
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