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FQPF30N06 Технические параметры

ON Semiconductor  FQPF30N06 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 21A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 39W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series QFET®
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 945pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±25V
Drain Current-Max (Abs) (ID) 22.5A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 90A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 350 mJ
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FQPF30N06 Документы

FQPF30N06 brand manufacturers: ON Semiconductor, Anli stock, FQPF30N06 reference price.ON Semiconductor. FQPF30N06 parameters, FQPF30N06 Datasheet PDF and pin diagram description download.You can use the FQPF30N06 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find FQPF30N06 pin diagram and circuit diagram and usage method of function,FQPF30N06 electronics tutorials.You can download from the Anli.