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FQPF30N06L Технические параметры

ON Semiconductor  FQPF30N06L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.27g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 38W Tc
Turn Off Delay Time 60 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series QFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Свойство продукта Значение свойства
Current Rating 22.5A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 210ns
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 22.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 90A
Height 16.07mm
Length 10.36mm
Width 4.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQPF30N06L Документы

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