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FQS4900TF Технические параметры

ON Semiconductor  FQS4900TF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 230.4mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.3A 300mA
Number of Elements 2 Elements
Turn Off Delay Time 35 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2W
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FQS4900
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 650mA, 10V
Vgs(th) (Max) @ Id 1.95V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 60V 300V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 47 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.65Ohm
Drain to Source Breakdown Voltage -300V
Pulsed Drain Current-Max (IDM) 5.2A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQS4900TF Документы

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