Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
ON Semiconductor FQT4N20LTF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 18 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Number of Pins | 3Pins | |
| Weight | 188mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 850mA Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.2W Tc | |
| Turn Off Delay Time | 15 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | QFET® | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 1.35Ohm | |
| Voltage - Rated DC | 200V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | not_compliant | |
| Current Rating | 850mA | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.2W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 7 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.35 Ω @ 425mA, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V | |
| Rise Time | 70ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 40 ns | |
| Continuous Drain Current (ID) | 850mA | |
| Threshold Voltage | 2V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 0.85A | |
| Drain to Source Breakdown Voltage | 200V | |
| Avalanche Energy Rating (Eas) | 52 mJ | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Width | 3.56mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |