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H11A817BW Технические параметры
ON Semiconductor H11A817BW technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optoisolators - Transistor, Photovoltaic Output | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 4-DIP (0.400, 10.16mm) | |
| Number of Pins | 4Pins | |
| Supplier Device Package | 4-DIP | |
| Current Transfer Ratio-Min | 130% @ 5mA | |
| Operating Temperature | -55°C~100°C | |
| Packaging | Tube | |
| Published | 2003 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 100°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 200mW | |
| Voltage - Isolation | 5300Vrms |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Output Voltage | 70V | |
| Output Type | Transistor | |
| Number of Channels | 1Channel | |
| Number of Circuits | 1Circuit | |
| Voltage - Forward (Vf) (Typ) | 1.2V | |
| Input Type | DC | |
| Output Current per Channel | 50mA | |
| Rise Time | 2.4μs | |
| Collector Emitter Voltage (VCEO) | 200mV | |
| Max Collector Current | 50mA | |
| Rise / Fall Time (Typ) | 2.4μs 2.4μs | |
| Current - DC Forward (If) (Max) | 50mA | |
| Current Transfer Ratio (Max) | 260% @ 5mA | |
| Vce Saturation (Max) | 200mV | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
H11A817BW Документы
- DatasheetsH11AA814, H11A617, H11A817 Series
- ReachStatementFairchild-Semiconductor-company-9.pdf
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