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H11AG1M Технические параметры

ON Semiconductor  H11AG1M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6Pins
Weight 855mg
Collector-Emitter Saturation Voltage 400mV
Current Transfer Ratio-Min 100% @ 1mA
Number of Elements 1 Element
Operating Temperature -40°C~100°C
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature UL RECOGNIZED
Max Power Dissipation 260mW
Свойство продукта Значение свойства
Voltage - Isolation 4170Vrms
Output Type Transistor with Base
Configuration SINGLE
Number of Channels 1Channel
Power Dissipation 260mW
Voltage - Forward (Vf) (Typ) 1.25V
Input Type DC
Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Forward Current 50mA
Max Output Voltage 30V
Output Current per Channel 50mA
Rise Time 5μs
Fall Time (Typ) 5 μs
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 50mA
Reverse Breakdown Voltage 6V
Max Input Current 50mA
On-State Current-Max 0.05A
Turn On / Turn Off Time (Typ) 5μs, 5μs
Current Transfer Ratio 300%
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

H11AG1M Документы

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