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H11B1VM Технические параметры

ON Semiconductor  H11B1VM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 weeks ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6Pins
Weight 855mg
Collector-Emitter Saturation Voltage 1V
Current Transfer Ratio-Min 500% @ 1mA
Number of Elements 1 Element
Operating Temperature -40°C~100°C
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Additional Feature UL APPROVED, VDE APPROVED
Max Power Dissipation 250mW
Voltage - Isolation 4170Vrms
Output Voltage 25V
Output Type Darlington with Base
Configuration SINGLE
Number of Channels 1Channel
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Optoelectronic Device Type DARLINGTON OUTPUT OPTOCOUPLER
Forward Current 80mA
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 150mA
Reverse Breakdown Voltage 3V
Max Input Current 80mA
Turn On / Turn Off Time (Typ) 25μs, 18μs
Current Transfer Ratio 500%
Radiation Hardening No
RoHS Status ROHS3 Compliant

H11B1VM Документы

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