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HGT1S10N120BNS Технические параметры

ON Semiconductor  HGT1S10N120BNS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Factory Lead Time 44 Weeks
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 1.31247g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.7V
Number of Elements 1 Element
Test Conditions 960V, 10A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 312W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 35A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number HGT1S10N120
JESD-30 Code R-PSSO-G2
Voltage 1.2kV
Element Configuration Single
Current 35A
Power Dissipation 298W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 35A
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Breakdown Voltage 1.2kV
Turn On Time 32 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Continuous Collector Current 55A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 320μJ (on), 800μJ (off)
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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HGT1S10N120BNS Документы

HGT1S10N120BNS brand manufacturers: ON Semiconductor, Anli stock, HGT1S10N120BNS reference price.ON Semiconductor. HGT1S10N120BNS parameters, HGT1S10N120BNS Datasheet PDF and pin diagram description download.You can use the HGT1S10N120BNS Transistors - IGBTs - Single, DSP Datesheet PDF, find HGT1S10N120BNS pin diagram and circuit diagram and usage method of function,HGT1S10N120BNS electronics tutorials.You can download from the Anli.