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HGT1S10N120BNST Технические параметры
ON Semiconductor HGT1S10N120BNST technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 4 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Weight | 1.31247g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Test Conditions | 960V, 10A, 10 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2017 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOW CONDUCTION LOSS | |
| HTS Code | 8541.29.00.95 | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 298W | |
| Terminal Form | GULL WING | |
| Current Rating | 35A | |
| Base Part Number | HGT1S10N120 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSSO-G2 | |
| Rise Time-Max | 15ns | |
| Element Configuration | Single | |
| Power Dissipation | 298W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 35A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Max Breakdown Voltage | 1.2kV | |
| Turn On Time | 32 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | |
| Continuous Collector Current | 55A | |
| Turn Off Time-Nom (toff) | 330 ns | |
| IGBT Type | NPT | |
| Gate Charge | 100nC | |
| Current - Collector Pulsed (Icm) | 80A | |
| Td (on/off) @ 25°C | 23ns/165ns | |
| Switching Energy | 320μJ (on), 800μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Fall Time-Max (tf) | 200ns | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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