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HGT1S12N60A4DS Технические параметры

ON Semiconductor  HGT1S12N60A4DS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 1.31247g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.7V
Number of Elements 1 Element
Test Conditions 390V, 12A, 10 Ω, 15V
Turn Off Delay Time 96 μs
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Max Power Dissipation 167W
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number HGT1S12N60
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 167W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 17 μs
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 54A
Reverse Recovery Time 30ns
Turn On Time 33 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 78nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55μJ (on), 50μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGT1S12N60A4DS Документы

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