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HGT1S20N60A4S9A Технические параметры

ON Semiconductor  HGT1S20N60A4S9A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package TO-263AB
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.8V
Current-Collector (Ic) (Max) 70A
Test Conditions 390V, 20A, 3Ohm, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Max Power Dissipation 290W
Current Rating 70A
Element Configuration Single
Power Dissipation 290W
Input Type Standard
Power - Max 290W
Rise Time 12ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Gate Charge 142nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 15ns/73ns
Switching Energy 105μJ (on), 150μJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

HGT1S20N60A4S9A Документы

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