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ON Semiconductor HGTD1N120BNS9A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 7 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Weight | 260.37mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 2.5V | |
| Number of Elements | 1 Element | |
| Test Conditions | 960V, 1A, 82 Ω, 15V | |
| Turn Off Delay Time | 67 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED | |
| HTS Code | 8541.29.00.95 | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 60W | |
| Terminal Form | GULL WING | |
| Current Rating | 5.3A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | HGTD1N120 | |
| JESD-30 Code | R-PSSO-G2 | |
| Rise Time-Max | 14ns | |
| Element Configuration | Single | |
| Power Dissipation | 60W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Turn On Delay Time | 15 ns | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 5.3A | |
| JEDEC-95 Code | TO-252AA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Max Breakdown Voltage | 1.2kV | |
| Turn On Time | 24 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 1A | |
| Turn Off Time-Nom (toff) | 333 ns | |
| IGBT Type | NPT | |
| Gate Charge | 14nC | |
| Current - Collector Pulsed (Icm) | 6A | |
| Td (on/off) @ 25°C | 15ns/67ns | |
| Switching Energy | 70μJ (on), 90μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |