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HGTG10N120BND Технические параметры

ON Semiconductor  HGTG10N120BND technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 7 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.45V
Number of Elements 1 Element
Test Conditions 960V, 10A, 10 Ω, 15V
Turn Off Delay Time 165 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Свойство продукта Значение свойства
Max Power Dissipation 298W
Current Rating 35A
Element Configuration Single
Power Dissipation 298W
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application MOTOR CONTROL
Rise Time 165ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 35A
Reverse Recovery Time 70 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 32 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Continuous Collector Current 35A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 850μJ (on), 800μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTG10N120BND Документы

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