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HGTG18N120BN Технические параметры

ON Semiconductor  HGTG18N120BN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.45V
Number of Elements 1 Element
Test Conditions 960V, 18A, 3 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
Свойство продукта Значение свойства
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 390W
Current Rating 54A
JESD-30 Code R-PSFM-T3
Element Configuration Single
Power Dissipation 390W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 54A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 38 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A
Turn Off Time-Nom (toff) 345 ns
IGBT Type NPT
Gate Charge 165nC
Current - Collector Pulsed (Icm) 165A
Td (on/off) @ 25°C 23ns/170ns
Switching Energy 800μJ (on), 1.8mJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTG18N120BN Документы

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