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HGTG18N120BND Технические параметры

ON Semiconductor  HGTG18N120BND technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.45V
Number of Elements 1 Element
Test Conditions 960V, 18A, 3 Ω, 15V
Turn Off Delay Time 170 μs
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 390W
Current Rating 54A
Свойство продукта Значение свойства
Polarity NPN
Element Configuration Single
Power Dissipation 390W
Input Type Standard
Turn On Delay Time 23 μs
Transistor Application MOTOR CONTROL
Rise Time 22ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 54A
Reverse Recovery Time 75 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 38 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A
Turn Off Time-Nom (toff) 345 ns
IGBT Type NPT
Gate Charge 165nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 23ns/170ns
Switching Energy 1.9mJ (on), 1.8mJ (off)
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 200ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTG18N120BND Документы

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