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HGTG27N120BN Технические параметры

ON Semiconductor  HGTG27N120BN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 44 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 960V, 27A, 3 Ω, 15V
Turn Off Delay Time 240 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 500W
Свойство продукта Значение свойства
Current Rating 72A
Element Configuration Single
Power Dissipation 500W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 24 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 72A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 42 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 27A
Continuous Collector Current 72A
Turn Off Time-Nom (toff) 360 ns
IGBT Type NPT
Gate Charge 270nC
Current - Collector Pulsed (Icm) 216A
Td (on/off) @ 25°C 24ns/195ns
Switching Energy 2.2mJ (on), 2.3mJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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