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HGTG30N60C3D Технические параметры

ON Semiconductor  HGTG30N60C3D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 7 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.5V
Number of Elements 1 Element
Turn Off Delay Time 320 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Max Power Dissipation 208W
Current Rating 30A
Base Part Number HGTG30N60
Polarity NPN
Element Configuration Single
Power Dissipation 208W
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application MOTOR CONTROL
Rise Time 45ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 63A
Reverse Recovery Time 60ns
Turn On Time 85 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Turn Off Time-Nom (toff) 550 ns
Gate Charge 162nC
Current - Collector Pulsed (Icm) 252A
Switching Energy 1.05mJ (on), 2.5mJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTG30N60C3D Документы

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