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HGTG40N60A4 Технические параметры

ON Semiconductor  HGTG40N60A4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 44 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 390V, 40A, 2.2 Ω, 15V
Turn Off Delay Time 145 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Max Power Dissipation 625W
Current Rating 40A
Element Configuration Single
Power Dissipation 625W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Rise Time 18ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Turn On Time 47 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 40A
Continuous Collector Current 75A
Turn Off Time-Nom (toff) 240 ns
Gate Charge 350nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 25ns/145ns
Switching Energy 400μJ (on), 370μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTG40N60A4 Документы

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