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HGTG40N60B3 Технические параметры

ON Semiconductor  HGTG40N60B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 44 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.39g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 480V, 40A, 3 Ω, 15V
Turn Off Delay Time 170 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Max Power Dissipation 290W
Current Rating 70A
Element Configuration Single
Power Dissipation 290W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 47 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Max Breakdown Voltage 600V
Turn On Time 82 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Turn Off Time-Nom (toff) 385 ns
Gate Charge 250nC
Current - Collector Pulsed (Icm) 330A
Td (on/off) @ 25°C 47ns/170ns
Switching Energy 1.05mJ (on), 800μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTG40N60B3 Документы

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