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HGTP12N60C3D Технические параметры

ON Semiconductor  HGTP12N60C3D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.65V
Number of Elements 1 Element
Turn Off Delay Time 270 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Voltage - Rated DC 600V
Max Power Dissipation 104W
Current Rating 24A
Base Part Number HGTP12N60
Polarity NPN
Element Configuration Single
Power Dissipation 104W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 28 μs
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 24A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-220AB
Turn On Time 48 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Turn Off Time-Nom (toff) 480 ns
Gate Charge 48nC
Current - Collector Pulsed (Icm) 96A
Switching Energy 380μJ (on), 900μJ (off)
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTP12N60C3D Документы

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