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HGTP20N60A4 Технические параметры

ON Semiconductor  HGTP20N60A4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 44 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 390V, 20A, 3 Ω, 15V
Turn Off Delay Time 73 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 290W
Свойство продукта Значение свойства
Current Rating 70A
Element Configuration Single
Power Dissipation 290W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 15 ns
Transistor Application POWER CONTROL
Rise Time 12ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Turn On Time 28 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Continuous Collector Current 70A
Turn Off Time-Nom (toff) 160 ns
Gate Charge 142nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 15ns/73ns
Switching Energy 105μJ (on), 150μJ (off)
Height 9.4mm
Length 10.67mm
Width 4.83mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTP20N60A4 Документы

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