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HGTP2N120CN Технические параметры

ON Semiconductor  HGTP2N120CN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Current-Collector (Ic) (Max) 13A
Test Conditions 960V, 2.6A, 51Ohm, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 104W
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 2.6A
IGBT Type NPT
Gate Charge 30nC
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 25ns/205ns
Switching Energy 96μJ (on), 355μJ (off)

HGTP2N120CN Документы

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