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HGTP3N60A4 Технические параметры

ON Semiconductor  HGTP3N60A4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.05V
Number of Elements 1 Element
Test Conditions 390V, 3A, 50 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 70W
Свойство продукта Значение свойства
Current Rating 17A
Element Configuration Single
Power Dissipation 70W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 17A
JEDEC-95 Code TO-220AB
Turn On Time 17.5 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 21nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 6ns/73ns
Switching Energy 37μJ (on), 25μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 100ns
Height 9.02mm
Length 10.28mm
Width 4.57mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTP3N60A4 Документы

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