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HGTP3N60A4D Технические параметры

ON Semiconductor  HGTP3N60A4D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Factory Lead Time 36 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 390V, 3A, 50 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Voltage - Rated DC 600V
Max Power Dissipation 70W
Current Rating 17A
Element Configuration Single
Power Dissipation 70W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 17A
Reverse Recovery Time 19 ns
JEDEC-95 Code TO-220AB
Turn On Time 17.5 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 21nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 6ns/73ns
Switching Energy 37μJ (on), 25μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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HGTP3N60A4D Документы

HGTP3N60A4D brand manufacturers: ON Semiconductor, Anli stock, HGTP3N60A4D reference price.ON Semiconductor. HGTP3N60A4D parameters, HGTP3N60A4D Datasheet PDF and pin diagram description download.You can use the HGTP3N60A4D Transistors - IGBTs - Single, DSP Datesheet PDF, find HGTP3N60A4D pin diagram and circuit diagram and usage method of function,HGTP3N60A4D electronics tutorials.You can download from the Anli.