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IMH20TR1G Технические параметры

ON Semiconductor  IMH20TR1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 15V
Number of Elements 2 Elements
hFEMin 100
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
Свойство продукта Значение свойства
HTS Code 8541.21.00.95
Voltage - Rated DC 15V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Polarity NPN
Element Configuration Dual
Halogen Free Halogen Free
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Vce Saturation (Max) @ Ib, Ic 80mV @ 2.5mA, 50mA
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 2.2k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IMH20TR1G Документы

IMH20TR1G brand manufacturers: ON Semiconductor, Anli stock, IMH20TR1G reference price.ON Semiconductor. IMH20TR1G parameters, IMH20TR1G Datasheet PDF and pin diagram description download.You can use the IMH20TR1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find IMH20TR1G pin diagram and circuit diagram and usage method of function,IMH20TR1G electronics tutorials.You can download from the Anli.