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ISL9R3060G2 Технические параметры

ON Semiconductor  ISL9R3060G2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-2
Number of Pins 2Pins
Weight 6.33g
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tube
Series Stealth™
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Applications FAST SOFT RECOVERY
Additional Feature FREEWHEELING DIODE, SNUBBER DIODE
HTS Code 8541.10.00.80
Capacitance 120pF
Voltage - Rated DC 600V
Current Rating 30A
Свойство продукта Значение свойства
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100μA @ 600V
Power Dissipation 200W
Output Current 30A
Voltage - Forward (Vf) (Max) @ If 2.4V @ 30A
Case Connection CATHODE
Forward Current 30A
Operating Temperature - Junction -55°C~175°C
Max Surge Current 325A
Forward Voltage 2.4V
Max Reverse Voltage (DC) 600V
Average Rectified Current 30A
Number of Phases 1Phase
Reverse Recovery Time 45 ns
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 325A
Reverse Voltage 600V
Max Forward Surge Current (Ifsm) 325A
Recovery Time 45 ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ISL9R3060G2 Документы

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