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J113 Технические параметры
ON Semiconductor J113 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 20 hours ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-92-3 | |
| Weight | 201mg | |
| Breakdown Voltage / V | -35V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 2006 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 35V | |
| Max Power Dissipation | 625mW | |
| Current Rating | 50mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | J113 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Power Dissipation | 625mW | |
| Power - Max | 625mW | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 35V | |
| Continuous Drain Current (ID) | 2mA | |
| Gate to Source Voltage (Vgs) | -35V | |
| Max Junction Temperature (Tj) | 150°C | |
| Drain to Source Resistance | 100Ohm | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V | |
| Voltage - Cutoff (VGS off) @ Id | 500mV @ 1μA | |
| Voltage - Breakdown (V(BR)GSS) | 35V | |
| Resistance - RDS(On) | 100Ohms | |
| Height | 5.33mm | |
| Length | 5.2mm | |
| Width | 4.19mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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