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J176 Технические параметры
ON Semiconductor J176 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Number of Pins | 3Pins | |
| Weight | 201mg | |
| Transistor Element Material | SILICON | |
| Breakdown Voltage / V | 30V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN (SN) | |
| HTS Code | 8541.21.00.95 | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 350mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Current Rating | 25mA | |
| Base Part Number | J176 | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 350mW | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (ID) | -25mA | |
| Gate to Source Voltage (Vgs) | 30V | |
| FET Technology | JUNCTION | |
| Drain to Source Resistance | 250Ohm | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V | |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 10nA | |
| Resistance - RDS(On) | 250Ohm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
J176 Документы
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