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KSA1370EBU Технические параметры

ON Semiconductor  KSA1370EBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 100mA
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSA1370
Power - Max 1W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 200V
Frequency - Transition 150MHz
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KSA1370EBU Документы

KSA1370EBU brand manufacturers: ON Semiconductor, Anli stock, KSA1370EBU reference price.ON Semiconductor. KSA1370EBU parameters, KSA1370EBU Datasheet PDF and pin diagram description download.You can use the KSA1370EBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSA1370EBU pin diagram and circuit diagram and usage method of function,KSA1370EBU electronics tutorials.You can download from the Anli.