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KSA910YSHTA Технические параметры

ON Semiconductor  KSA910YSHTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Current-Collector (Ic) (Max) 50mA
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number KSA910
Power - Max 800mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 150V
Frequency - Transition 100MHz
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KSA910YSHTA Документы

KSA910YSHTA brand manufacturers: ON Semiconductor, Anli stock, KSA910YSHTA reference price.ON Semiconductor. KSA910YSHTA parameters, KSA910YSHTA Datasheet PDF and pin diagram description download.You can use the KSA910YSHTA Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSA910YSHTA pin diagram and circuit diagram and usage method of function,KSA910YSHTA electronics tutorials.You can download from the Anli.