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KSB1017YTU Технические параметры

ON Semiconductor  KSB1017YTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 2 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.27g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -80V
Свойство продукта Значение свойства
Max Power Dissipation 25W
Current Rating -4A
Frequency 9MHz
Element Configuration Single
Power Dissipation 25W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product 9MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 5V
Current - Collector Cutoff (Max) 30μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
Transition Frequency 9MHz
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
Height 15.87mm
Length 10.16mm
Width 2.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

KSB1017YTU Документы

KSB1017YTU brand manufacturers: ON Semiconductor, Anli stock, KSB1017YTU reference price.ON Semiconductor. KSB1017YTU parameters, KSB1017YTU Datasheet PDF and pin diagram description download.You can use the KSB1017YTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSB1017YTU pin diagram and circuit diagram and usage method of function,KSB1017YTU electronics tutorials.You can download from the Anli.