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KSB1116ALTA Технические параметры

ON Semiconductor  KSB1116ALTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 1A
hFEMin 135
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -60V
Max Power Dissipation 750mW
Свойство продукта Значение свойства
Current Rating -1A
Base Part Number KSB1116
Element Configuration Single
Gain Bandwidth Product 120MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -6V
RoHS Status RoHS Compliant
Lead Free Lead Free
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KSB1116ALTA Документы

KSB1116ALTA brand manufacturers: ON Semiconductor, Anli stock, KSB1116ALTA reference price.ON Semiconductor. KSB1116ALTA parameters, KSB1116ALTA Datasheet PDF and pin diagram description download.You can use the KSB1116ALTA Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSB1116ALTA pin diagram and circuit diagram and usage method of function,KSB1116ALTA electronics tutorials.You can download from the Anli.